In Situ Growth Behavior of SiC Whiskers with High Aspect Ratio in the Synthesis of ZrB2-SiC Composite Powders
نویسندگان
چکیده
منابع مشابه
Co-Dispersion Behavior of ZrB2–SiC–B4C–C Powders with Polyethyleneimine
The aqueous dispersion behavior of ZrB₂, SiC powders with B₄C and C as sintering aids was investigated. Well co-dispersed suspension can be obtained in acidic solutions in presence of polyethyleneimine (PEI). The adsorption of PEI on the powder surface was measured by thermal gravimetric (TG) analysis. Rheological measurements displayed the effect of dispersant on the flow behavior of as-prepar...
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In order to clearly understand the details of ZrO₂ formation during ablation, high intensity continuous laser was chosen to irradiate ZrB₂/SiC. The results reveal that there are two different modes of ZrO₂ formation depending on whether liquid SiO₂ is present. When liquid SiO₂ is present, ZrO₂ generated by the oxidation of ZrB₂ is firstly dissolved into SiO₂. Then, ZrO₂ will precipitate again, ...
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چکیده هدف از پژوهش حاضر بررسی رابطه کیفیت زندگی کاری و رفتار شهروندی سازمانی در مدارس مقطع متوسطه پسرانه شهر تهران از دیدگاه دبیران بود. روش پژوهش حاضر توصیفی و از نوع همبستگی بود. از بین دبیران مدارس شهر تهران تعداد 380 نفر به روش نمونه گیری خوشه ای چند مرحله ای به عنوان نمونه پژوهش انتخاب شدند و با تکمیل پرسشنامه ی کیفیت زندگی کاری والتون(1975) و پرسشنامه ی رفتار شهروندی سازمانی پودساکو...
15 صفحه اولcomparison of catalytic activity of heteropoly compounds in the synthesis of bis(indolyl)alkanes.
heteropoly acids (hpa) and their salts have advantages as catalysts which make them both economically and environmentally attractive, strong br?nsted acidity, exhibiting fast reversible multi-electron redox transformations under rather mild conditions, very high solubility in polar solvents, fairly high thermal stability in the solid states, and efficient oxidizing ability, so that they are imp...
15 صفحه اولAnisotropic etching of SiC whiskers.
We have demonstrated a method of producing nanoplatelets or complex well-ordered nanostructures from silicon carbide (SiC) whiskers. Preferential etching of SiC whiskers in a mixture of hydrofluoric and nitric acids (3:1 ratio) at 100 degrees C results in the selective removal of cubic SiC and the formation of complex structures resembling a pagoda architecture. Possible mechanisms governing se...
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ژورنال
عنوان ژورنال: Materials
سال: 2020
ISSN: 1996-1944
DOI: 10.3390/ma13163502